MOSFET 2N-CH 20V 4.8A 8TSSOP

IRF7757TRPBF

Manufacturer Part NumberIRF7757TRPBF
DescriptionMOSFET 2N-CH 20V 4.8A 8TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7757TRPBF datasheet
 


Specifications of IRF7757TRPBF

Fet Type2 N-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs35 mOhm @ 4.8A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C4.8AVgs(th) (max) @ Id1.2V @ 250µA
Gate Charge (qg) @ Vgs23nC @ 4.5VInput Capacitance (ciss) @ Vds1340pF @ 15V
Power - Max1.2WMounting TypeSurface Mount
Package / Case8-TSSOPConfigurationDual
Transistor PolarityDual N-ChannelDrain-source Breakdown Voltage20 V
Gate-source Breakdown Voltage12 VContinuous Drain Current4.8 A
Power Dissipation1.2 WMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 1/9

Download datasheet (151Kb)Embed
Next
l
Ultra Low On-Resistance
Dual N-Channel MOSFET
l
l
Very Small SOIC Package
Low Profile (< 1.2mm)
l
Available in Tape & Reel
l
l
Common Drain Configuration
Lead-Free
l
Description
®
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Parameter
V
Drain- Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
www.irf.com
V
DSS
20V
1
2
provides the de-
3
4
1 = S1
2 = G1
3 = S 2
4 = G2
@ 4.5V
GS
@ 4.5V
GS
ƒ
ƒ
ƒ
PD-96018
IRF7757PbF
HEXFET Power MOSFET
R
max (mW)
I
DS(on)
D
35@V
= 4.5V
4.8A
GS
40@V
= 2.5V
3.8A
GS
8
7
6
5
8 = D
7 = D
6 = D
TSSOP-8
5 = D
Max.
Units
20
V
4.8
3.9
A
19
1.2
0.76
9.5
mW/°C
± 12
V
-55 to + 150
°C
Max.
Units
105
°C/W
06/22/05
1

IRF7757TRPBF Summary of contents

  • Page 1

    ... Lead-Free l Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for battery and load management ...

  • Page 2

    IRF7757PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

  • Page 3

    VGS TOP 7.5V 5.0V 4.5V 3.5V 3.0V 100 2.5V 2.0V BOTTOM 1.5V 10 1.5V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. ...

  • Page 4

    IRF7757PbF 10000 0V, C iss = rss = oss = Ciss 1000 Coss Crss 100 ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

  • Page 6

    IRF7757PbF 0.05 0. 4.8A 0.03 0.02 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. ...

  • Page 7

    250µA 0.7 0.5 0.3 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 120 110 100 ...

  • Page 8

    IRF7757PbF E INDEX MARK ccc e bbb aaa C 8 SURF LEAD AS S IGNMENTS ...

  • Page 9

    EXAMPLE: T HIS IS AN IRF7702 DAT E CODE (YWW) TSSOP-8 Tape and Reel Information FEED DIRECT ION WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com PART NUMBER 7702 LOT CODE ...