IRF7757TRPBF International Rectifier, IRF7757TRPBF Datasheet

IRF7757TRPBF

Manufacturer Part Number

IRF7757TRPBF

Description

MOSFET 2N-CH 20V 4.8A 8TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7757TRPBF.pdf (9 pages)

Specifications of IRF7757TRPBF

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

35 mOhm @ 4.8A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

4.8A

Vgs(th) (max) @ Id

1.2V @ 250µA

Gate Charge (qg) @ Vgs

23nC @ 4.5V

Input Capacitance (ciss) @ Vds

1340pF @ 15V

Power - Max

1.2W

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Configuration

Dual

Transistor Polarity

Dual N-Channel

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

4.8 A

Power Dissipation

1.2 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Thermal Resistance

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

signer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Description

www.irf.com

θJA

@ T

Dual N-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

Common Drain Configuration

Lead-Free

STG

= 70°C

= 25°C

= 70°C

Power MOSFETs from International Rectifier

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Parameter

provides the de-

@ 4.5V

4 = G2

1 = S1

2 = G1

3 = S 2

20V

DSS

HEXFET Power MOSFET

8 = D

7 = D

6 = D

5 = D

DS(on)

IRF7757PbF

-55 to + 150

35@V

40@V

Max.

105

0.76

± 12

4.8

3.9

1.2

9.5

max (mW)

= 4.5V

= 2.5V

TSSOP-8

PD-96018

4.8A

3.8A

mW/°C

Units

°C/W

06/22/05

°C

Related parts for IRF7757TRPBF

IRF7757TRPBF Summary of contents

Page 1

... Lead-Free l Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for battery and load management ...

Page 2

IRF7757PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

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IRF7757TRPBF datasheet download

IRF7757TRPBF International Rectifier, IRF7757TRPBF Datasheet

IRF7757TRPBF

Specifications of IRF7757TRPBF

Related parts for IRF7757TRPBF

IRF7757TRPBF Summary of contents

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