STS1DNC45 STMicroelectronics, STS1DNC45 Datasheet - Page 3

• Manufacturer Part Number: STS1DNC45
• Description: MOSFET N-CHAN 450V 0.4A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STS1DNC45

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
I
t
SD
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
r(off)
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
g
rr
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
DD
G
G
= 4.7
= 4.7
= 0.4 A, V
= 0.4 A, di/dt = 100A/µs,
= 225 V, I
= 360 V, I
= 10 V
= 360 V, I
= 100 V, T
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
Thermal Impedance
j
= 10 V
= 150°C
= 0.5 A
= 1.5 A,
= 1.5 A
= 10 V
= 0
Min.
Min.
Min.
Typ.
Typ.
Typ.
225
530
6.7
1.3
3.2
4.7
8.5
12
18
4
7
Max.
Max.
Max.
STS1DNC45
0.4
1.6
1.6
10
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
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