BSO211P H Infineon Technologies, BSO211P H Datasheet

no-image

BSO211P H

Manufacturer Part Number
BSO211P H
Description
MOSFET 2P-CH 20V 4A 8DSO
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO211P H

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
67 mOhm @ 4.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
1.2V @ 25µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
1095pF @ 15V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
DSO-8
Package
SO-8
Vds (max)
-20.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
67.0 mOhm
Rds (on) (max) (@2.5v)
110.0 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev.1.3
Features
• dual P-Channel in SO8
• Qualified according JEDEC for target applications
• 150°C operating temperature
• Super Logic Level (2.5V rated)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSO211P H
®
P-Power-Transistor
1)
2)
j
Package
PG-DSO-8
=25 °C, unless otherwise specified
1)
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
211P
stg
V
V
V
V
T
I
T
JESD22-A114 HBM
D
page 1
A
A
GS
GS
GS
GS
=-4.6 A, R
=25 °C
=25 °C
=4.5 V, T
=4.5 V, T
=2.5 V, T
=2.5 V, T
GS
A
A
A
A
Lead free
Yes
V
R
I
=25 °C
=70 °C
=25 °C
=70 °C
Product Summary
=25 Ω
D
DS
DS(on),max
10 secs
Halogen free
Yes
-4.6
-3.7
-3.6
-2.9
2.0
V
V
0 (0-250V)
GS
GS
-55 ... 150
55/150/56
=4.5 V
=2.5 V
Value
-18.4
260
±12
PG-DSO-8
28
steady state
-4.0
-3.2
-3.2
-2.5
1.6
BSO211P H
110
-20
4.6
67
Packing
dry
Unit
A
mJ
V
W
°C
°C
V
mΩ
A
2010-02-10

Related parts for BSO211P H

BSO211P H Summary of contents

Page 1

... =2 =70 ° =25 °C D,pulse A =25 Ω =-4 =25 °C tot stg JESD22-A114 HBM page 1 BSO211P mΩ =2.5 V 110 GS 4.6 A PG-DSO-8 Halogen free Packing Yes dry Value Unit 10 secs steady state -4.6 -4.0 A -3.7 -3.2 -3.6 -3.2 -2.9 -2.5 -18.4 ...

Page 2

... =-0.25 mA (BR)DSS =-25 µA GS(th =- DSS T =25 ° =- =150 ° = GSS =2 =-3.6 A DS(on =4 =-4 |>2 DS(on)max =-4 page 2 BSO211P H Values Unit min. typ. max K 110 - - 150 , - - 62 - -0.6 -0.9 -1 µ -100 - - -100 110 mΩ Ω 2010-02-10 ...

Page 3

... See figure 16 for gate charge parameter definition Rev.1.3 Symbol Conditions C iss = oss f =1 MHz C rss t d( =1.6 Ω I =-4 d(off g(th = =-4 4 plateau oss =25 ° S,pulse =-4 =25 ° = /dt =100 A/µs F page 3 BSO211P H Values min. typ. max. - 730 1095 - 240 360 - 200 300 - - -18 -1 Unit 2010-02-10 ...

Page 4

... DS A parameter limited by on-state resistance - Rev.1.3 2 Drain current I =f parameter 120 160 0 [° Max. transient thermal impedance Z =f(t thJA p parameter µ 100 µ 100 [V] DS page 4 BSO211P H ≤ 4 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 2010-02-10 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter 0.0 0.5 1 Rev.1.3 6 Typ. drain-source on resistance R =f(I DS(on) parameter: V 100 2 [V] 8 Typ. forward transconductance g =f 150 ° ° 1.5 2.0 2.5 3.0 0 [V] page 5 BSO211P =25 ° 2.5 V 3.0 V 3.5 V 4 [A] D =25 ° [ 2010-02-10 ...

Page 6

... GS(th) 1.6 1.4 1.2 1 0.8 0.6 0.4 0 100 140 -60 T [° Forward characteristics of reverse diode I =f parameter Ciss 1 10 Coss 0 10 Crss - [V] DS page 6 BSO211P =-25 µ - 100 140 T [° 150 °C 150°C 98% 25 °C 25 °C 98% 0.5 1 1.5 V [V] SD 180 2 2010-02-10 ...

Page 7

... Drain-source breakdown voltage V =f BR(DSS 22.5 22 21.5 21 20.5 20 19.5 19 18.5 18 -60 -20 20 Rev.1.3 14 Typ. gate charge V =f(Q GS parameter °C 8 100 °C 7 125 ° [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 T [°C] j page 7 BSO211P =-4.6 A pulsed gate [nC] gate ate 2010-02-10 ...

Page 8

... Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.3 page 8 BSO211P H 2010-02-10 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev.1.3 page 9 BSO211P H 2010-02-10 ...

Related keywords