BSO211P H Infineon Technologies, BSO211P H Datasheet - Page 7

• Manufacturer Part Number: BSO211P H
• Description: MOSFET 2P-CH 20V 4A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 67.0 mOhm
• Rds (on) (max) (@2.5v): 110.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
10
10
10
AS
BR(DSS)
1
0
-1
=f(t
10
0
22.5
21.5
20.5
19.5
18.5
AV
23
22
21
20
19
18
=f(T
); R
-60
j
GS
); I
j(start)
=25 Ω
D
-20
=1 mA
10
1
20
t
AV
T
[µs]
j
60
[°C]
10
100
125 °C
2
100 °C
140
180
25 °C
page 7
10
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
10
Q
V
9
8
7
6
5
4
3
2
1
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
=-4.6 A pulsed
g s
4
Q
Q
gate
g
Q
8
[nC]
sw
4 V
Q
10 V
g d
16 V
12
BSO211P H
Q
g ate
2010-02-10
16