BSO211P H Infineon Technologies, BSO211P H Datasheet - Page 3

• Manufacturer Part Number: BSO211P H
• Description: MOSFET 2P-CH 20V 4A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 67.0 mOhm
• Rds (on) (max) (@2.5v): 110.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
4)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
oss
rr
V
f =1 MHz
V
I
V
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
DD
GS
DD
GS
R
=-4.6 A, R
=25 °C
F
=25 °C
=10 V, I
/dt =100 A/µs
=0 V, V
=15 V, V
=10 V, I
=0 to 4.5 V
=10 V, V
=0 V, I
F
F
DS
=-4.6 A,
=I
D
G
GS
GS
=-4.6 A,
=1.6 Ω
=15 V,
D
=4.5 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
730
240
200
-1.8
13
23
27
-1
-1
-3
-3
-8
9
5
8
-
-
-
max.
-18.4
1095
BSO211P H
-1.4
360
300
-10
12
20
35
41
12
-2
-2
-4
-4
-2
6
-
Unit
pF
ns
nC
V
nC
A
V
nC
2010-02-10