PBSS3515E NXP Semiconductors, PBSS3515E Datasheet - Page 7

• Manufacturer Part Number: PBSS3515E
• Description: TRANSISTOR,PNP,15V,0.5A,SOT416
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515E

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -15V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: SOT-416
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS3515E_2
Product data sheet
Fig 8.
Fig 10. Collector-emitter saturation resistance as a
R
V
CEsat
( )
CEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
10
10
10
10
10
1
2
1
1
10
1
2
3
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
1
B
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
10
10
(1)
(2)
(3)
10
10
(1)
(2)
(3)
2
2
I
I
006aaa377
C
C
006aaa374
(mA)
(mA)
10
10
Rev. 02 — 27 April 2009
3
3
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
R
V
CEsat
( )
CEsat
(V)
(1) I
(2) I
(3) I
10
(1) I
(2) I
(3) I
10
10
10
10
10
10
1
3
2
1
1
10
1
2
3
10
T
Collector-emitter saturation voltage as a
function of collector current; typical values
T
function of collector current; typical values
15 V, 0.5 A PNP low V
C
C
C
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
1
1
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
PBSS3515E
CEsat
10
10
© NXP B.V. 2009. All rights reserved.
2
(BISS) transistor
2
I
I
006aaa379
C
C
006aaa375
(mA)
(mA)
10
10
3
3
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