IRF7343QTRPBF International Rectifier, IRF7343QTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7343QTRPBF
• Description: MOSFET N/P-CH 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7343QTRPBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7343QTRPBFCT

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100
100
10
10
1
1
0.1
3
TOP
BOTTOM
V
DS
V
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
3.0V
GS
, Drain-to-Source Voltage (V)
T = 25 C
J
, Gate-to-Source Voltage (V)
1
4
°
3.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 150 C
J
10
5
= 25V
°
°
100
6
100
0.1
10
100
1
10
0.2
1
0.1
TOP
BOTTOM
V
V
SD
T = 150 C
DS
4.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V
J
0.5
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
IRF7343QPbF
°
1
0.8
T = 25 C
3.0V
J
20µs PULSE WIDTH
T = 150 C
J
10
°
1.1
V
°
GS
= 0 V
1.4
3
100