IRF7343QTRPBF International Rectifier, IRF7343QTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7343QTRPBF
• Description: MOSFET N/P-CH 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7343QTRPBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7343QTRPBFCT

IRF7343QPbF
4
0.12
0.10
0.08
0.06
0.04
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
I =
D
V
4.7A
GS
T , Junction Temperature ( C)
2
J
, Gate-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
4
I
D
= 4.7A
6
V
°
GS
8
=
10V
10
A
200
160
120
0.120
0.100
0.080
0.060
0.040
80
40
0
25
0
Starting T , Junction Temperature ( C)
50
10
I
J
D
, Drain Current (A)
75
VGS = 4.5V
20
100
TOP
BOTTOM
VGS = 10V
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30
125
°
2.1A
3.8A
4.7A
I D
150
40