IRF7343QTRPBF International Rectifier, IRF7343QTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7343QTRPBF
• Description: MOSFET N/P-CH 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7343QTRPBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7343QTRPBFCT

IRF7343QPbF
100
6
0.1
10
1
100
0.1
10
1
TOP
BOTTOM
3
-V
DS
-4.5V
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-V
GS
, Drain-to-Source Voltage (V)
4
, Gate-to-Source Voltage (V)
T = 25 C
1
J
°
-3.0V
5
20µs PULSE WIDTH
T = 25 C
J
V
20µs PULSE WIDTH
DS
10
= -25V
°
T = 150 C
6
J
°
100
7
100
0.1
100
10
0.1
10
1
1
0.2
0.1
TOP
BOTTOM
-V
-V
T = 150 C
0.4
J
DS
SD
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
°
1
0.8
-3.0V
20µs PULSE WIDTH
T = 150 C
T = 25 C
J
1.0
J
10
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V
°
°
GS
1.2
= 0 V
1.4
100