IRF7343QTRPBF International Rectifier, IRF7343QTRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7343QTRPBF
• Description: MOSFET N/P-CH 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7343QTRPBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7343QTRPBFCT

IRF7343QPbF
8
100
1200
0.1
10
960
720
480
240
0.0001
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
-V
DS
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
(THERMAL RESPONSE)
0.001
=
=
=
=
SINGLE PULSE
0V,
C
C
C
gs
gd
ds
C rss
C iss
C oss
+ C
+ C
10
f = 1MHz
gd ,
gd
C
ds
0.01
t , Rectangular Pulse Duration (sec)
SHORTED
1
100
0.1
20
16
12
8
4
0
0
I =
D
-3.1A
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
Q , Total Gate Charge (nC)
G
10
J
DM
x Z
1
V
V
V
20
DS
DS
DS
thJA
P
2
10
DM
=-48V
=-30V
=-12V
+ T
A
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t
1
30
t
2
100
40