SI2318DS-T1-E3 Vishay, SI2318DS-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI2318DS-T1-E3
• Description: MOSFET N-CH 40V 3A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2318DS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 20V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.9A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 58mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2318DS-T1-E3TR

Si2318DS
Vishay Siliconix
Notes:
a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
20
16
12
8
4
0
0
V
GS
a
2
V
= 10 V thru 5 V
DS
Output Characteristics
a
4 V
- Drain-to-Source Voltage (V)
a
J
= 25 °C, unless otherwise noted
4
1 V, 2 V
V
Symbol
R
V
(BR)DSS
I
t
t
I
I
C
D(on)
DS(on)
V
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
6
oss
t
SD
t
iss
rss
fs
gs
gd
r
f
g
g
8
V
I
V
V
D
3 V
DS
DS
DS
≅ 1.0 A, V
= 20 V, V
= 32 V, V
V
V
= 20 V, V
V
V
V
V
V
I
V
V
DS
DS
S
DS
10
GS
GS
DD
DS
GS
DS
= 1.25 A, V
Test Conditions
= 0 V, V
≥ 4.5 V, V
= V
= 0 V, I
= 32 V, V
= 4.5 V, I
= 20 V, R
= 10 V, I
= 10 V, I
GEN
GS
GS
GS
GS
, I
= 10 V, I
= 0 V, T
= 10 V, R
D
GS
= 0 V, f = 1 MHz
D
D
D
= 250 µA
GS
D
GS
= 250 µA
GS
L
= ± 20 V
= 3.9 A
= 3.9 A
= 3.5 A
= 20 Ω
= 10 V
= 0 V
= 0 V
J
D
= 55 °C
G
= 3.9 A
= 6 Ω
20
16
12
8
4
0
0.0
0.5
Min.
40
1.0
1
6
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
1.5
Limits
0.036
0.045
25 °C
Typ.
540
0.8
1.6
2.1
1.8
T
2.0
11
10
80
45
12
20
15
5
C
S09-0130-Rev. B, 02-Feb-09
= 125 °C
Document Number: 72322
2.5
± 100
0.045
0.058
Max.
3.0
0.5
1.2
10
15
10
20
30
25
3
- 55 °C
3.5
4.0
Unit
nC
nA
µA
pF
ns
Ω
Ω
V
A
S
V
4.5