SI2318DS-T1-E3 Vishay, SI2318DS-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI2318DS-T1-E3
• Description: MOSFET N-CH 40V 3A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2318DS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 20V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.9A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 58mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2318DS-T1-E3TR

Si2318DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72322.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
- 3
Single Pulse
I
D
50
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
1.0
0.1
10
10
0.1
100
- 2
Limited by R
* V
Safe Operating Area, Junction-to-Case
125
GS
> minimum V
V
Square Wave Pulse Duration (s)
Single Pulse
T
DS
150
A
= 25 °C
- Drain-to-Source Voltage (V)
DS(on) *
10
1
- 1
GS
at which R
10
DS(on)
10
8
6
4
2
0
0.01
1
is specified
10 µs
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
0.1
100
T
10
Single Pulse Power
A
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
= 25 °C
DM
JM
1
- T
Time (s)
t
A
1
S09-0130-Rev. B, 02-Feb-09
= P
t
2
Document Number: 72322
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 166 °C/W
100
600
600