SI2318DS-T1-E3 Vishay, SI2318DS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2318DS-T1-E3
• Description: MOSFET N-CH 40V 3A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2318DS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 20V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.9A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 58mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2318DS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72322
S09-0130-Rev. B, 02-Feb-09
0.08
0.06
0.04
0.02
0.00
0.1
10
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.9 A
0.2
On-Resistance vs. Drain Current
= 20 V
2
T
4
J
V
= 150 °C
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
4
- Drain Current (A)
Gate Charge
8
V
V
0.6
GS
GS
= 4.5 V
= 10 V
6
0.8
12
T
J
8
= 25 °C
1.0
16
10
1.2
20
12
1.4
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
- 25
D
GS
= 3.9 A
= 10 V
8
2
V
C
T
V
GS
0
J
oss
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
16
I
4
D
= 3.9 A
50
Vishay Siliconix
C
iss
24
6
75
Si2318DS
100
www.vishay.com
32
8
125
150
40
10
3