PMV30UN,215 NXP Semiconductors, PMV30UN,215 Datasheet
PMV30UN,215
Specifications of PMV30UN,215
934057773215
PMV30UN T/R
PMV30UN T/R
Related parts for PMV30UN,215
PMV30UN,215 Summary of contents
Page 1
PMV30UN TrenchMOS™ ultra low level FET Rev. 01 — 25 June 2003 M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV30UN in SOT23. 1.2 Features Surface mount package ...
Page 2
Philips Semiconductors 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGR V gate-source voltage (DC drain current (DC) ...
Page 3
Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...
Page 4
Philips Semiconductors 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 4.1 Transient thermal impedance th(j-sp) (K/W) = 0.5 0.2 10 0.1 0.05 0.02 single pulse 1 10 ...
Page 5
Philips Semiconductors 5. Characteristics Table 4: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...
Page 6
Philips Semiconductors 0.2 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 1.8 ...
Page 7
Philips Semiconductors 1 V GS(th) (V) 0.8 typ 0.6 min 0.4 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. (pF ...
Page 8
Philips Semiconductors ( 150 0 and 150 Fig 12. Source (diode forward) current ...
Page 9
Philips Semiconductors 6. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...
Page 10
Philips Semiconductors 7. Revision history Table 5: Revision history Rev Date CPCN Description 01 20030625 - Product data (9397 750 11569) 9397 750 11569 Product data TrenchMOS™ ultra low level FET Rev. 01 — 25 June 2003 PMV30UN © Koninklijke ...
Page 11
Philips Semiconductors Philips Semiconductors 8. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...
Page 12
Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...