pmv30un-01 NXP Semiconductors, pmv30un-01 Datasheet
pmv30un-01
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pmv30un-01 Summary of contents
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... TrenchMOS™ ultra low level FET Rev. 01 — 25 June 2003 M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV30UN in SOT23. 1.2 Features Surface mount package 1.3 Applications Battery management 1.4 Quick reference data V DS ...
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... Figure 2 and 100 4.5 V; Figure pulsed Figure Figure pulsed Rev. 01 — 25 June 2003 PMV30UN TrenchMOS™ ultra low level FET Min Max Unit - 1.9 W ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature 4.5 V Rev. 01 — 25 June 2003 PMV30UN TrenchMOS™ ultra low level FET 03aa25 50 100 150 200 ------------------- 100 03am33 100 s ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 11569 Product data TrenchMOS™ ultra low level FET Conditions Figure Rev. 01 — 25 June 2003 PMV30UN Min Typ Max Unit - - 65 K/W 03am32 ...
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... 4.5 V; Figure MHz; Figure 4 1 Figure Rev. 01 — 25 June 2003 PMV30UN TrenchMOS™ ultra low level FET Min Typ Max Unit 0.45 0 0.25 0 ...
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... ----------------------------- - R Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 01 — 25 June 2003 PMV30UN TrenchMOS™ ultra low level FET 03am36 V DS > DSon 150 ( DSon ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (V) Rev. 01 — 25 June 2003 PMV30UN TrenchMOS™ ultra low level FET 03aj64 min typ 0 0.2 0.4 0 03am38 C iss C oss C rss 10 2 © ...
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... 1 ( Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 25 June 2003 PMV30UN TrenchMOS™ ultra low level FET 03am39 (nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 01 — 25 June 2003 PMV30UN TrenchMOS™ ultra low level FET detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Philips Semiconductors 7. Revision history Table 5: Revision history Rev Date CPCN Description 01 20030625 - Product data (9397 750 11569) 9397 750 11569 Product data TrenchMOS™ ultra low level FET Rev. 01 — 25 June 2003 PMV30UN © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Trademarks TrenchMOS — Rev. 01 — 25 June 2003 Rev. 01 — 25 June 2003 PMV30UN PMV30UN TrenchMOS™ ultra low level FET TrenchMOS™ ultra low level FET is a trademark of Koninklijke Philips Electronics N.V. Fax: + 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 June 2003 Document order number: 9397 750 11569 PMV30UN TrenchMOS™ ultra low level FET ...