pmv30un-01 NXP Semiconductors, pmv30un-01 Datasheet - Page 2

• Manufacturer Part Number: pmv30un-01
• Description: Pmv30un Utrenchmos Tm Ultra Low Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 11569
Product data
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
DS
DGR
GS
tot
stg
j
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Limiting values
Conditions
25 C
25 C
T
T
T
T
sp
sp
sp
sp
sp
sp
Rev. 01 — 25 June 2003
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
T
T
j
j
150 C
150 C; R
Figure 1
GS
GS
= 4.5 V;
= 4.5 V;
p
p
GS
10 s;
10 s
= 20 k
Figure 2
Figure 2
Figure 3
and
TrenchMOS™ ultra low level FET
3
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
55
55
PMV30UN
Max
20
20
5.7
3.65
23.1
1.9
+150
+150
1.6
6.4
8
2 of 12
Unit
V
V
V
A
A
A
W
A
A
C
C