STP4NK50Z STMicroelectronics, STP4NK50Z Datasheet - Page 11

• Manufacturer Part Number: STP4NK50Z
• Description: MOSFET N-CH 500V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3190-5

DIM.
A1
A3
B2
B3
B5
B6
C2
L1
L2
G
A
B
C
D
E
H
L
MIN.
0.64
0.45
0.48
15.9
2.2
0.9
0.7
5.2
6.4
4.4
0.8
6
9
L2
TO-251 (IPAK) MECHANICAL DATA
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
TYP.
mm
0.3
0.8
D
L1
MAX.
0.85
0.95
16.3
1.3
2.4
1.1
0.9
5.4
0.6
0.6
6.2
6.6
4.6
9.4
1.2
1
H
L
0.086
0.035
0.027
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
MIN.
0.012
0.031
TYP.
inch
0068771-E
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
11/13