STB8NM60D STMicroelectronics, STB8NM60D Datasheet - Page 4

• Manufacturer Part Number: STB8NM60D
• Description: MOSFET N-CH 600V 8A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.9ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5244-2

Electrical characteristics
4/13
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
t
I
I
d(on)
d(off)
d(off)
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
t
t
c
rr
rr
r
f
f
rr
rr
(2)
(1)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-off Delay Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Switching times
Source drain diode
Parameter
Parameter
Rev2
I
I
V
I
V
V
R
(see Figure 12)
V
R
(see Figure 12)
SD
SD
SD
DD
DD
DD
DD
G
G
=5A, V
=5A, di/dt = 100A/µs,
=5A, di/dt = 100A/µs,
=4.7Ω, V
=4.7Ω, V
=50 V, Tj=25°C
=50 V, Tj=150°C
=300V, I
=480V, I
Test Condictions
Test Condictions
GS
GS
GS
=0
D
D
=2.5A,
=5A,
=10V
=10V
STB8NM60D - STP8NM60D
Min.
Min.
Typ.
Typ.
107
330
178
640
13
10
26
14
8
8
8
6
7
Max.
Max.
1.5
20
5
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
nC
nC
ns
ns
A
A
V
A
A