MOSFET N-CH 600V 2.4A TO-220

STP3NK60Z

Manufacturer Part NumberSTP3NK60Z
DescriptionMOSFET N-CH 600V 2.4A TO-220
ManufacturerSTMicroelectronics
SeriesSuperMESH™
STP3NK60Z datasheet
 

Specifications of STP3NK60Z

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs3.6 Ohm @ 1.2A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C2.4AVgs(th) (max) @ Id4.5V @ 50µA
Gate Charge (qg) @ Vgs11.8nC @ 10VInput Capacitance (ciss) @ Vds311pF @ 25V
Power - Max45WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id2.4ADrain Source Voltage Vds600V
On Resistance Rds(on)3.6ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ3.75VRohs CompliantYes
ConfigurationSingleResistance Drain-source Rds (on)3.6 Ohms
Forward Transconductance Gfs (max / Min)1.8 SDrain-source Breakdown Voltage600 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current2.4 A
Power Dissipation45 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-7525-5
STP3NK60Z
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
14
15
Page 1/15

Download datasheet (758Kb)Embed
Next
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
V
R
DSS
DS(on)
STP3NK60Z
600 V
< 3.6
STP3NK60ZFP
600 V
< 3.6
STB3NK60Z
600 V
< 3.6
STD3NK60Z
600 V
< 3.6
STD3NK60Z-1
600 V
< 3.6
TYPICAL R
(on) = 3.3
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE
STP3NK60Z
STP3NK60ZFP
STB3NK60ZT4
STD3NK60Z-1
STD3NK60ZT4
July 2003
STP3NK60Z - STP3NK60ZFP
I
Pw
D
2.4 A
45 W
2.4 A
20 W
2.4 A
45 W
2.4 A
45 W
2.4 A
45 W
TO-220
INTERNAL SCHEMATIC DIAGRAM
MARKING
PACKAGE
P3NK60Z
TO-220
P3NK60ZFP
TO-220FP
2
B3NK60Z
D
PAK
D3NK60Z
IPAK
D3NK60Z
DPAK
TO-220FP
3
1
2
D
PAK
3
1
IPAK
DPAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
TAPE & REEL
3
2
1
3
2
1
1/15

STP3NK60Z Summary of contents

  • Page 1

    ... ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP3NK60Z STP3NK60ZFP STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 July 2003 STP3NK60Z - STP3NK60ZFP TO-220 ...

  • Page 2

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

  • Page 3

    ... Reverse Recovery Current RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area defined as a constant equivalent capacitance giving the same charging time as C oss eq DSS STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 =25°C UNLESS OTHERWISE SPECIFIED) CASE Test Conditions mA ...

  • Page 4

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 Safe Operating Area Safe Operating Area For TO-220FP Output Characteristics 4/15 Thermal Impedance Thermal Impedance For TO-220FP Transfer Characteristics ...

  • Page 5

    ... Transconductance Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/15 ...

  • Page 6

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/15 Normalized BVDSS vs Temperature ...

  • Page 7

    ... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/15 ...

  • Page 8

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/15 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14 ...

  • Page 9

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2 Ø 3 TYP MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2 ...

  • Page 10

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º 10/ PAK MECHANICAL DATA mm. TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8 10.4 8.5 5.28 15.85 1.4 1.75 3.2 0.4 4º inch MIN ...

  • Page 11

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 inch MAX. MIN. TYP. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 ...

  • Page 12

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 12/15 TO-251 (IPAK) MECHANICAL DATA mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 0.8 ...

  • Page 13

    ... P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 * on sales type STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 TUBE SHIPMENT (no suffix)* MAX. 0.476 0.641 All dimensions are in millimeters REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A 330 B 1.5 ...

  • Page 14

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11 ...

  • Page 15

    ... STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...