STP60NF06 STMicroelectronics, STP60NF06 Datasheet - Page 4

• Manufacturer Part Number: STP60NF06
• Description: MOSFET N-CH 60V 60A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP60NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 73nC @ 10V
• Input Capacitance (ciss) @ Vds: 1660pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2779-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
I
I
C
DS(on)
GS(th)
C
C
d(on)
d(off)
Q
Q
DSS
GSS
fs
Q
t
oss
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
R
(see Figure 11)
V
R
(see Figure 11)
V
V
V
V
V
(see Figure 12)
D
DS
DS
GS
DS
GS
DD
DD
DS
DS
GS
DD
GS
G
G
= 250 µA, V
= 4.7Ω V
= 4.7Ω, V
=Max rating, T
= Max rating
= ±20V
= V
= 10V, I
= 15V
= 25V, f = 1 MHz,
= 0
= 10V
= 30V, I
= 30V, I
= 30V, I
Test conditions
Test conditions
Test conditions
GS
, I
,
I
D
D
D
GS
D
D
D
GS
=30A
= 30A
GS
= 30A
= 30A,
= 250µA
= 60A,
= 10V
=10V
= 0
C
=125°C
Min.
Min.
Min.
60
2
0.014 0.016
1660
Typ.
Typ.
Typ.
400
140
50
54
23
15
65
45
20
9
STP60NF06
Max.
Max.
±100
Max.
10
73
1
4
Unit
Unit
Unit
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
V
Ω
S