STP60NF06 STMicroelectronics, STP60NF06 Datasheet - Page 8

• Manufacturer Part Number: STP60NF06
• Description: MOSFET N-CH 60V 60A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP60NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 73nC @ 10V
• Input Capacitance (ciss) @ Vds: 1660pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2779-5

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Figure 11. Switching times test circuit for
Figure 13. Test circuit for inductive load
Figure 15. Unclamped inductive waveform
Test circuit
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resistive load
switching and diode recovery times
Test circuit
Figure 12. Gate charge test circuit
Figure 14. Unclamped Inductive load test
Figure 16. Switching time waveform
circuit
STP60NF06