IRFP3306PBF International Rectifier, IRFP3306PBF Datasheet - Page 2

• Manufacturer Part Number: IRFP3306PBF
• Description: MOSFET N-CH 60V 120A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP3306PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4520pF @ 50V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 120A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 220 W
• Mounting Style: Through Hole
• Gate Charge Qg: 85 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
V
ΔV
R
V
I
I
R
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
SD
g
gs
gd
sync
rr
above this value .
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
2
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
temperature.
R
Symbol
Symbol
Symbol
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)h –––
= 25Ω, I
/ΔT
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 96A, V
= 25°C (unless otherwise specified)
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.04mH
Parameter
Parameter
g
- Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
„
…
†
‡
ˆ
‰
60
mended footprint and soldering techniques refer to application note #AN-994.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
I
C
as C
C
SD
oss
θ
oss
oss
≤ 75A, di/dt ≤ 1400A/μs, V
4520
0.07
–––
–––
–––
–––
–––
–––
–––
500
250
720
880
––– 160c
–––
–––
3.3
0.7
1.9
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
85
20
26
59
15
76
40
77
31
35
34
45
while V
-100
–––
–––
250
100
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
620
–––
DS
4.2
4.0
1.3
20
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
μA
nA
nC
nC
pF
ns
ns
Ω
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A, V
= 75A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
DD
= 2.7Ω
= V
= 60V, V
= 48V, V
= 50V, I
=30V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V g
= 30V
= 10V g
= 0V
= 0V, V
= 0V, V
≤ V
GS
(BR)DSS
, I
D
DS
DSS
D
S
DS
DS
D
D
= 250μA
GS
GS
= 75A, V
= 150μA
= 75A
=0V, V
= 75A g
DSS
= 0V to 48V i, See Fig. 11
= 0V to 48V h
, T
.
Conditions
Conditions
Conditions
= 0V
= 0V, T
J
.
V
I
di/dt = 100A/μs g
F
≤ 175°C.
R
= 75A
D
GS
= 51V,
GS
= 5mAd
J
= 10V
= 125°C
= 0V g
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G
D
S