STP22NM60N STMicroelectronics, STP22NM60N Datasheet - Page 8

• Manufacturer Part Number: STP22NM60N
• Description: MOSFET N-CH 600V 16A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP22NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10306-5

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Normalized B
V
GS(th)
(norm)
1.00
0.80
0.70
1.10
0.90
-50
vs temperature
-25
0
25
50
VDSS
I
D
75
=250µA
vs temperature
100 125
Doc ID 15853 Rev 4
AM06410v1
T
J
(°C)
Figure 15. Normalized on resistance vs
R
DS(on)
(norm)
1.70
2.10
0.90
0.50
1.30
-50
temperature
-25
0
25
I
D
50
=8A
STB/F/I/P/W22NM60N
75
100 125
AM06411v1
T
J
(°C)