STP22NM60N STMicroelectronics, STP22NM60N Datasheet - Page 9

• Manufacturer Part Number: STP22NM60N
• Description: MOSFET N-CH 600V 16A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP22NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10306-5

STB/F/I/P/W22NM60N
3
Figure 17. Switching times test circuit for
Figure 19. Test circuit for inductive load
Figure 21. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 15853 Rev 4
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 18. Gate charge test circuit
Figure 20. Unclamped inductive load test
Figure 22. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
Test circuits
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
9/23
G
DD
DD