STW24NM65N STMicroelectronics, STW24NM65N Datasheet - Page 16

• Manufacturer Part Number: STW24NM65N
• Description: MOSFET N-CH 650V 19A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW24NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7035-5

Package mechanical data
16/19
Dim.
øR
øP
A1
b1
b2
L1
L2
D
A
E
S
b
c
e
L
19.85
15.45
14.20
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
TO-247 Mechanical data
18.50
mm.
5.45
5.50
Typ
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50