STW24NM65N STMicroelectronics, STW24NM65N Datasheet - Page 3

• Manufacturer Part Number: STW24NM65N
• Description: MOSFET N-CH 650V 19A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW24NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7035-5

STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Symbol
dv/dt
Symbol
R
R
R
I
SD
DM
P
V
V
thj-case
V
T
thj-amb
thj-pcb
T
I
I
TOT
ISO
GS
T
DS
stg
D
D
≤ 19 A, di/dt ≤ 400 A/µs, V
J
(2)
l
(3)
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-
case max
Thermal resistance junction-
amb max
Thermal resistance junction-
pcb max
Maximum lead temperature
for soldering purposes
C
=25 °C)
Parameter
DD
= 80% V
Parameter
C
= 25 °C
GS
(BR)DSS
=0)
C
C
TO-220 I²PAK TO-247 D²PAK TO-220FP
= 25 °C
= 100 °C
--
62.5
--
0.78
TO-247/D²PAK
TO-220/I²PAK
50
--
300
160
19
12
76
--
-55 to 150
Value
± 25
30
650
150
--
15
TO-220FP
Electrical ratings
12
2500
19
76
40
62.5
3.1
(1)
(1)
(1)
--
°C/W
°C/W
°C/W
Unit
Unit
V/ns
°C
°C
°C
W
V
V
A
A
A
V
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