STP30NM60ND STMicroelectronics, STP30NM60ND Datasheet - Page 7

• Manufacturer Part Number: STP30NM60ND
• Description: MOSFET N-CH 600V 25A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP30NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8448-5

STx30NM60ND
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
V
GS
12
10
(V)
8
6
4
2
0
I
D
Gfs(S)
30.5
25.5
20.5
15.5
10.5
0
(A)
5.5
0.5
30
25
20
15
10
5
0
0
0
20
Output characteristics
5
5
10
40
10
5V
T
J
=-50°C
15
V
I
D
DD
=25A
V
60
=480V
15
GS
20
150°C
=10V
80
20
25
AM00051v1
25
30 V
100
AM00048v1
4V
25°C
AM00045v1
SD
I
D
(A)
30
(V)
Qg(nC)
Figure 9.
Figure 11. Static drain-source on resistance
C(pF)
10000
R
1000
0.135
0.115
0.095
0.075
0.055
0.035
0.015
100
10
DS(on)
1
(Ω)
I
D
0.1
5
4
3
2
1
0
(A)
0
0
Transfer characteristics
5
2
1
10
4
Electrical characteristics
V
I
D
GS
10
=12.5A
=10V
15
6
20
100
8
AM00052v1
25
AM00044v1
Ciss
V
Coss
AM00046v1
GS
Crss
(V)
V
GS
I
D
(A)
(V)
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