STP30NM60N STMicroelectronics, STP30NM60N Datasheet - Page 4

• Manufacturer Part Number: STP30NM60N
• Description: MOSFET N-CH 600V 25A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8447-5

Electrical characteristics
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Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
V
Symbol
Symbol
C
V
R
(BR)DSS
g
C
I
I
C
oss eq.
C
Q
GS(th)
Q
DS(on
GSS
DSS
fs
Q
R
oss
iss
rss
gs
gd
g
g
(1)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent Output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
V
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 19)
I
V
V
V
V
D
DS
DS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= 0, V
= Max rating
= Max rating, T
= 15 V, I
= 50 V, f = 1 MHz, V
= 10 V
= ± 20 V
= V
= 10 V, I
=480 V, I
Test conditions
Test conditions
GS
DS
, I
GS
D
D
D
= 0 to 480 V
D
= 250 µA
= 12.5 A
= 12.5 A
= 25 A,
= 0
C
=125°C
GS
= 0
Min.
Min.
600
2
2700
Typ.
Typ.
210
0.1
25
22
66
91
14
50
3
3
Max.
Max.
0.13
100
100
1
4
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
Ω
Ω
V
V
S