STP30NM60N STMicroelectronics, STP30NM60N Datasheet - Page 7

• Manufacturer Part Number: STP30NM60N
• Description: MOSFET N-CH 600V 25A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8447-5

STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
I
D
Gfs(S)
30.5
25.5
20.5
15.5
10.5
(A)
5.5
0.5
V
30
25
20
15
10
GS
5
0
12
10
(V)
0
0
8
6
4
2
0
0
Output characteristics
5
5
20
10
40
5V
10
T
J
=-50°C
15
V
I
D
DD
=25A
V
60
=480V
GS
15
20
=10V
150°C
80
20
25
100
AM00045v1
AM00051v1
30 V
25
4V
AM00048v1
25°C
Qg(nC)
SD
I
D
(V)
(A)
30
Figure 9.
Figure 11. Static drain-source on resistance
C(pF)
10000
1000
100
10
1
R
0.135
0.115
0.095
0.075
0.055
0.035
0.015
0.1
DS(on)
I
(Ω)
D
5
4
3
2
1
0
(A)
0
0
Transfer characteristics
5
1
2
10
4
Electrical characteristics
V
I
10
D
GS
=12.5A
=10V
15
6
20
100
8
AM00052v1
25
V
AM00044v1
GS
Ciss
AM00046v1
Coss
(V)
Crss
I
V
D
(A)
GS
30
(V)
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