IPD90N03S4L-02 Infineon Technologies, IPD90N03S4L-02 Datasheet
IPD90N03S4L-02
Specifications of IPD90N03S4L-02
IPD90N03S4L-02TR
SP000273284
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IPD90N03S4L-02 Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Rev. 3.0 Product Summary DS(on),max I D Marking 4N03L02 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 ° =25 °C tot stg - page 1 IPD90N03S4L- 2 PG-TO252-3-11 Value Unit 360 240 ±16 V 136 W -55 ... +175 °C 55/175/56 2008-03-18 ...
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... Conditions R - thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =90 µA GS(th = DSS T =25 ° = =125 ° = =85 ° = GSS =4 =45 A DS( page 2 IPD90N03S4L-02 Values min. typ. max 1 1.0 1 1000 = 100 - 2.2 2.6 - 1.8 2.2 Unit K µ 2008-03-18 ...
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... plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 1.1K/W the chip is able to carry 200A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD90N03S4L-02 Values min. typ. max. - 7500 9750 = 1900 2500 - 100 - = 110 - 3 0.6 0 120 - 100 Unit ...
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... DS C parameter 1000 1 ms 100 Rev. 3.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPD90N03S4L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-03-18 ...
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... V GS Rev. 3.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 3 2 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on °C -55 °C 175 °C 2 [V] page 5 IPD90N03S4L- ° 3 100 150 I [ -60 - 100 T [° 4 200 140 180 2008-03-18 ...
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... V SD Rev. 3.0 10 Typ. capacitances 900µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 1 0.8 1 1.2 1.4 [V] page 6 IPD90N03S4L- MHz [ j(start) 100°C 150° 100 t [µs] AV Ciss Coss Crss 25 30 25°C 1000 2008-03-18 ...
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... I D 1000 750 22.5 A 500 45 A 250 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 3.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th) 80 100 120 [nC] page 7 IPD90N03S4L- -60 - 100 T [° 140 180 Q gate 2008-03-18 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.0 page 8 IPD90N03S4L-02 2008-03-18 ...
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... Revision History Version Revision 3.0 Revision 3.0 Rev. 3.0 Date 18.03.2008 18.03.2008 page 9 IPD90N03S4L-02 Changes Implementation of Vgs_max Update of disclaimer 2008-03-18 ...