IPD90N03S4L-02 Infineon Technologies, IPD90N03S4L-02 Datasheet - Page 7

• Manufacturer Part Number: IPD90N03S4L-02
• Description: MOSFET N-CH 30V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD90N03S4L-02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.2V @ 90µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 9750pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 1 V
• Continuous Drain Current: 90 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD90N03S4L-02; IPD90N03S4L-02TR; SP000273284

Rev. 3.0
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
1000
750
500
250
10
9
8
7
6
5
4
3
2
1
0
0
0
25
j
)
gate
D
); I
DD
90 A
45 A
22.5 A
20
D
= 90 A pulsed
40
75
Q
gate
T
60
j
[°C]
[nC]
125
6 V
80
100
24 V
120
175
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
34
33
32
31
30
29
28
V
g (th)
g s(th)
-60
GS
= f(T
j
); I
Q
-20
g s
D
= 1 mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
g d
IPD90N03S4L-02
100
140
2008-03-18
Q
gate
180