IPD90N03S4L-02 Infineon Technologies, IPD90N03S4L-02 Datasheet - Page 5

• Manufacturer Part Number: IPD90N03S4L-02
• Description: MOSFET N-CH 30V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD90N03S4L-02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.2V @ 90µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 9750pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 1 V
• Continuous Drain Current: 90 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD90N03S4L-02; IPD90N03S4L-02TR; SP000273284

Rev. 3.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
360
320
280
240
200
160
120
350
300
250
200
150
100
80
40
50
0
0
DS
GS
0
1
); T
); V
10 V
GS
j
j
DS
= 25 °C
5 V
= 6V
2
1
4.5 V
V
V
GS
DS
3
2
-55 °C
[V]
[V]
25 °C
4
3
175 °C
4 V
2.5 V
3.5 V
3 V
page 5
5
4
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
10
2.5
1.5
9
8
7
6
5
4
3
2
1
= f(I
= f(T
3
2
1
0
-60
D
3 V
j
); T
); I
GS
-20
D
j
= 25 °C
= 90 A; V
50
20
GS
T
I
D
100
j
60
= 10 V
[A]
[°C]
IPD90N03S4L-02
10 V
100
3.5 V
150
5 V
140
2008-03-18
4 V
4.5 V
200
180