STN1NK80Z STMicroelectronics, STN1NK80Z Datasheet

MOSFET N-CH 800V 250MA SOT223

STN1NK80Z

Manufacturer Part Number
STN1NK80Z
Description
MOSFET N-CH 800V 250MA SOT223
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STN1NK80Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
7.7nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 Ohms
Forward Transconductance Gfs (max / Min)
0.8 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.25 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
800V
On Resistance Rds(on)
13ohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4669-2

Available stocks

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Table 1: General Features
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
Table 2: Order Codes
January 2006
STQ1NK80ZR-AP
STN1NK80Z
STD1NK80Z
STD1NK80Z-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
STQ1NK80ZR-AP
N-CHANNEL 800V - 13
STD1NK80ZT4
STD1NK80Z-1
SALES TYPE
TYPE
STN1NK80Z
DS
(on) = 13
800 V
800 V
800 V
800 V
V
DSS
R
< 16
< 16
< 16
< 16
DS(on)
Q1NK80ZR
MARKING
N1NK80Z
D1NK80Z
D1NK80Z
Zener - Protected SuperMESH™ MOSFET
0.25A
0.3 A
1.0 A
1.0 A
STQ1NK80ZR-AP - STN1NK80Z
I
D
2.5 W
45 W
45 W
3 W
STD1NK80Z - STD1NK80Z-1
Pw
- 1 A TO-92 /SOT-223/DPAK/IPAK
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
SOT-223
TO-92 (Ammopack)
TO-92
DPAK
IPAK
DPAK
1
3
TAPE & REEL
TAPE & REEL
PACKAGING
AMMOPAK
TUBE
Rev. 3
2
SOT-223
IPAK
1
2
1
2
3
3
1/15

Related parts for STN1NK80Z

STN1NK80Z Summary of contents

Page 1

... FETs including revolutionary MDmesh™ products. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) Table 2: Order Codes SALES TYPE STQ1NK80ZR-AP STN1NK80Z STD1NK80ZT4 STD1NK80Z-1 January 2006 STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET Figure 1: Package I Pw DS(on ...

Page 2

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD (HBM-C= 100pF, R= 1.5K ESD(G-S) dv/dt (1) ...

Page 3

... Reverse Recovery Current I RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area defined as a constant equivalent capacitance giving the same charging time as C oss eq. V DSS STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 =25°C UNLESS OTHERWISE SPECIFIED) CASE Test Conditions mA ...

Page 4

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Figure 3: Safe Operating Area for SOT-223 Figure 4: Safe Operating Area for TO-92 Figure 5: Safe Operating Area for IPAK-DPAK 4/15 Figure 6: Thermal Impedance for SOT-223 Figure 7: Thermal Impedance for TO-92 Figure 8: Thermal Impedance for DPAK-IPAK ...

Page 5

... Figure 9: Output Characteristics Figure 10: Transconductance Figure 11: Gate Charge vs Gate-source Voltage STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Figure 12: Transfer Characteristics Figure 13: Static Drain-source On Resistance Figure 14: Capacitance Variations 5/15 ...

Page 6

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Figure 15: Normalized Gate Thereshold Volt- age vs Temperature Figure 16: Source-Drain Diode Forward Char- acteristics Figure 17: Avalanche Energy vs Starting Tj 6/15 Figure 18: Normalized On Resistance vs Tem- perature Figure 19: Normalized BVdss vs Temperature ...

Page 7

... Figure 20: Unclamped Inductive Load Test Cir- cuit Figure 21: Switching Times Test Circuit For Resistive Load Figure 22: Test Circuit For Inductive Load Switching and Diode Recovery Times STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Figure 23: Unclamped Inductive Wafeform Figure 24: Gate Charge Test Circuit 7/15 ...

Page 8

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark ...

Page 9

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7 ...

Page 10

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 DIM. MIN. A 4.32 b 0.36 D 4.45 E 3.30 e 2.41 e1 1.14 L 12.70 R 2.16 S1 0.92 W 0.41 V 10/15 TO-92 MECHANICAL DATA mm. TYP MAX. MIN. 4.95 0.170 0.51 0.014 4.95 0.175 3.94 0.130 2.67 0.094 1.40 0.044 15.49 0.50 2.41 0.085 1.52 0.036 ...

Page 11

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP 0.60 0.70 B1 2.90 3.00 c 0.24 0.26 D 6.30 6.50 e 2.30 e1 4.60 E 3.30 3.50 H 6.70 7. 0.02 inch MAX. MIN. TYP. 1.80 0.80 0.024 0.027 3.10 0.114 0.118 0.32 0.009 0.010 6.70 0.248 0.256 ...

Page 12

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 12/15 TO-252 (DPAK) MECHANICAL DATA mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 0.8 1. inch MIN. TYP. MAX. 0.087 ...

Page 13

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0 inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.012 0.95 0.6 ...

Page 14

... STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 10: Revision History Date Revision 08-Jun-2005 1 06-Sep-2005 2 16-Jan-2006 3 14/15 Description of Changes First Release Inserted Ecopack indication Corrected value on Table 3 ...

Page 15

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 All other names are the property of their respective owners © ...

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