STN1NK80Z STMicroelectronics, STN1NK80Z Datasheet - Page 6

• Manufacturer Part Number: STN1NK80Z
• Description: MOSFET N-CH 800V 250MA SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STN1NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 16 Ohms
• Forward Transconductance Gfs (max / Min): 0.8 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.25 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4669-2

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
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Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 16: Source-Drain Diode Forward Char-
acteristics
Figure 17: Avalanche Energy vs Starting Tj
Figure 18: Normalized On Resistance vs Tem-
perature
Figure 19: Normalized BVdss vs Temperature