IPD06N03LB G Infineon Technologies, IPD06N03LB G Datasheet - Page 2

• Manufacturer Part Number: IPD06N03LB G
• Description: MOSFET N-CH 30V 50A TO-252
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD06N03LB G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 40µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 2800pF @ 15V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD06N03LB G; IPD06N03LBGINTR; IPD06N03LBGXT; SP000016411

Rev. 1.9
1)
1)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Current is limited by bondwire; with an R
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j,max
=150 °C and duty cycle D <0.25 for V
j
=25 °C, unless otherwise specified
thJC
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
GS
fs
(BR)DSS
GS(th)
=1.8 K/W the chip is able to carry 87 A.
thJC
thJA
DS(on)
G
<-5 V
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=50 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
=40 µA
D
GS
GS
DS
DS(on)max
=50 A
=30 A
=0 V,
=0 V,
=0 V
5)
,
min.
1.2
30
39
-
-
-
-
-
-
-
-
-
Values
typ.
1.6
0.1
7.2
5.0
10
10
78
1
-
-
-
-
IPD06N03LB G
max.
100
100
1.8
9.1
6.1
75
50
2
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-04-14