IRF7665S2TR1PBF International Rectifier, IRF7665S2TR1PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7665S2TR1PBF
• Description: MOSFET N-CH 100V 4.1A DFET SB
• Manufacturer: International Rectifier

Specifications of IRF7665S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 515pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SB
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 30 W
• Gate Charge Qg: 8.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7665S2TR1PBFTR

IRF7665S2TR/TR1PbF
Notes:

‚
ƒ
„
…
V
∆V
R
V
I
I
R
gfs
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
(BR)DSS
DS(on)
GS(th)
G(int)
iss
oss
rss
oss
oss
oss
AS
SD
g
sw
rr
Q
Q
Q
Q
Repetitive rating; pulse width limited by
Starting T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
2
Surface mounted on 1 in. square Cu board.
charging time as C
(BR)DSS
max. junction temperature.
gs1
gs2
gd
godr
oss
eff.
eff. is a fixed capacitance that gives the same
/∆T
J
J
= 25°C, L = 0.944mH, R
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
oss
= 25°C (unless otherwise specified)
while V
Parameter
DS
Ù
Parameter
Parameter
is rising from 0 to 80% V
Parameter
gs2
G
Ù
= 25Ω, I
+ Q
gd
)
AS
= 8.9A.
DSS
.
Min.
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
8.8
†
‡
ˆ
‰
Š
Typ.
Typ.
Typ.
0.10
0.77
–––
–––
–––
–––
–––
–––
515
112
533
115
–––
–––
–––
4.0
3.5
8.3
1.9
3.2
2.4
4.0
3.8
6.4
7.1
3.6
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
(Drain) of part.
R
Based on testing done using a typical device & evaluation board
at Vbus=±45V, f
temperature
51
30
67
33
38
C
θ
measured with thermal couple mounted to top
is measured at T
Max.
Max.
Max.
-100
Typ.
14.4
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
5.0
1.3
62
20
13
58
∆
T
C
SW
is 55°C.
Units
Units
Units
=400KHz, and T
V/°C
mΩ
µA
nA
nC
nC
ns
pF
ns
J
Ω
V
V
S
A
V
of approximately 90°C.
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 17
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 8.9A
= 8.9A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= 100V, V
= 80V, V
= 25V, I
= 50V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
A
Max.
=25°C. The delta case
, I
8.9
37
f
D
D
DS
S
F
D
D
Conditions
Conditions
DS
DS
Conditions
= 250µA
GS
= 25µA
= 8.9A, V
= 8.9A, V
= 8.9A
= 8.9A
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
= 0V, T
f
= 0V
D
f
www.irf.com
= 1mA
DD
J
GS
G
= 125°C
= 25V
= 0V
g
Units
mJ
A
f
D
S