IRF7665S2TR1PBF International Rectifier, IRF7665S2TR1PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7665S2TR1PBF
• Description: MOSFET N-CH 100V 4.1A DFET SB
• Manufacturer: International Rectifier

Specifications of IRF7665S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 515pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SB
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 30 W
• Gate Charge Qg: 8.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7665S2TR1PBFTR

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Fig 15a. Unclamped Inductive Test Circuit
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
I
AS
320
280
240
200
160
120
80
40
R G
20V
V
V DS
0
GS
Vgs = 10V
t p
≤ 0.1 %
≤ 1
I AS
D.U.T
10
t p
0.01 Ω
L
I D , Drain Current (A)
T J = 125°C
20
15V
V
T J = 25°C
(BR)DSS
DRIVER
+
-
30
V DD
+
-
A
40
Fig 14. Maximum Avalanche Energy vs. Drain Current
160
140
120
100
140
120
100
80
60
40
20
80
60
40
90%
IRF7665S2TR/TR1PbF
V
10%
0
V
DS
Fig 16b. Switching Time Waveforms
25
GS
Fig 13. On-Resistance vs. Drain Current
6
Starting T J , Junction Temperature (°C)
7
V GS, Gate -to -Source Voltage (V)
t
50
d(on)
8
75
t
9
r
10
T J = 25°C
100
TOP
BOTTOM 8.90A
11
t
d(off)
T J = 125°C
125
12
I D = 8.9A
I D
1.64A
t
13
f
3.04A
150
14
175
15
5