IRF7665S2TR1PBF International Rectifier, IRF7665S2TR1PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7665S2TR1PBF
• Description: MOSFET N-CH 100V 4.1A DFET SB
• Manufacturer: International Rectifier

Specifications of IRF7665S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 515pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SB
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 30 W
• Gate Charge Qg: 8.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7665S2TR1PBFTR

IRF7665S2TR/TR1PbF
Fig 17a. Gate Charge Test Circuit
6
12V
V
GS
Same Type as D.U.T.
Current Regulator
.2µF
50KΩ
3mA
Current Sampling Resistors
.3µF
I
G
Re-Applied
Voltage
Reverse
Recovery
Current
D.U.T.

I
D
Fig 18.
‚
+
+
-
-
V
DS
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
D.U.T
SD
DS
Waveform
Waveform
HEXFET
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
ƒ
+
-
•
•
•
•
®
SD
Diode Recovery
Power MOSFETs
Current
dv/dt
Forward Drop
•
•
•
di/dt
Fig 17b. Gate Charge Waveform
G
Vgs(th)
Qgs1 Qgs2
Vds
D =
-
„
Period
P.W.
for N-Channel
Qgd
+
V
V
I
SD
GS
DD
Qgodr
=10V
+
-
Vgs
Id
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