IRF7665S2TR1PBF International Rectifier, IRF7665S2TR1PBF Datasheet - Page 7

• Manufacturer Part Number: IRF7665S2TR1PBF
• Description: MOSFET N-CH 100V 4.1A DFET SB
• Manufacturer: International Rectifier

Specifications of IRF7665S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 515pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SB
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 30 W
• Gate Charge Qg: 8.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7665S2TR1PBFTR

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Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
™
D
D
G
S
IRF7665S2TR/TR1PbF
D
D
D = DRAIN
G = GATE
S = SOURCE
CL
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