IRF7665S2TR1PBF International Rectifier, IRF7665S2TR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF7665S2TR1PBF
• Description: MOSFET N-CH 100V 4.1A DFET SB
• Manufacturer: International Rectifier

Specifications of IRF7665S2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 515pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SB
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 14.4 A
• Power Dissipation: 30 W
• Gate Charge Qg: 8.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7665S2TR1PBFTR

IRF7665S2TR/TR1PbF
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DirectFET™ Part Marking
8
™
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
DATE CODE
PART NUMBER
BATCH NUMBER
Line above the last character of
the date code indicates "Lead-Free"
LOGO
GATE MARKING
MIN
N/A
1.85
4.75
3.70
2.75
0.35
0.48
0.88
0.98
0.88
0.95
0.616
0.020
0.08
METRIC
DIMENSIONS
MAX
1.02
N/A
1.05
1.95
4.85
3.95
2.85
0.45
0.52
0.92
0.92
0.676
0.080
0.17
0.187
0.146
0.108
0.014
0.019
0.035
0.039
0.035
N/A
0.037
0.073
0.0235
0.0008
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.020
0.036
0.040
0.036
N/A
0.041
0.073
0.0274
0.0031
0.007
MAX
www.irf.com