IRF6678TR1 International Rectifier, IRF6678TR1 Datasheet

IRF6678TR1

Manufacturer Part Number

IRF6678TR1

Description

MOSFET N-CH 30V 30A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6678.pdf (10 pages)

Specifications of IRF6678TR1

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.2 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

30A

Vgs(th) (max) @ Id

2.25V @ 250µA

Gate Charge (qg) @ Vgs

65nC @ 4.5V

Input Capacitance (ciss) @ Vds

5640pF @ 15V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX

Configuration

Single Quad Drain Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

3 m Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

30 A

Power Dissipation

2.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Fall Time

8.1 ns

Minimum Operating Temperature

- 40 C

Rise Time

71 ns

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

IRF6678TR1TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6678TR1

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6678TR1PBF

Manufacturer:

JST

Quantity:

865

Current page: 1 of 10
Download datasheet (268Kb)

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Description

The IRF6678 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET

on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing

layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,

when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided

cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

bus converters including R

Notes:

www.irf.com

Absolute Maximum Ratings

RoHS compliant containing no lead or bormide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for for SyncFET Socket of Sync. Buck Converter

Low Conduction and Switching Losses

Compatible with Existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET MOSFETs.

Repetitive rating; pulse width limited by max. junction temperature.

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

V GS, Gate -to -Source Voltage (V)

T J = 25°C

DS(on)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

and gate charge to minimize losses in the SyncFET socket.

T J = 125°C

Ãe

I D = 29A

Parameter

@ 10V

„

†

‰

30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V

43nC

Starting T

Surface mounted on 1 in. square Cu board, steady state.

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

6.0

5.0

4.0

3.0

2.0

1.0

0.0

Fig 2. Typical On-Resistance vs. Gate Voltage

15nC

= 25°C, L = 0.75mH, R

I D = 23A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

4.0nC

gs2

Max.

150

240

210

V DS = 24V

V DS = 15V

±20

packaging to achieve the lowest

DS(on)

46nC

= 25Ω, I

IRF6678

DirectFET™ ISOMETRIC

28nC

= 23A.

oss

DS(on)

Units

1.8V

02/28/06

gs(th)

Related parts for IRF6678TR1

IRF6678TR1 Summary of contents

Page 1

RoHS compliant containing no lead or bormide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized ...

Page 2

IRF6678 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J Storage Temperature Range ...

Page 4

IRF6678 1000 100 10 2.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤ 60µs PULSE WIDTH 100 ...

Page 5

Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 Limited By Package 160 140 120 100 80 60 ...

Page 6

IRF6678 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, MX Outline ƒ (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details ...

Page 8

IRF6678 DirectFET™ Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6678). For 1000 parts on 7" reel, order IRF6678TR1) REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords

irf6678
irf6648
irf6646
irf6644
irf6635
irf6620
irf6618
irf6613
irf6612
irf6668
irf6645
IRF6678TR1 datasheet
IRF6678TR1 data sheet
IRF6678TR1 pdf datasheet
IRF6678TR1 component
IRF6678TR1 part
IRF6678TR1 distributor
IRF6678TR1 RoHS
IRF6678TR1 datasheet download