MOSFET N-CH 30V 80A TO-220

STP95N3LLH6

Manufacturer Part NumberSTP95N3LLH6
DescriptionMOSFET N-CH 30V 80A TO-220
ManufacturerSTMicroelectronics
SeriesSTripFET™
STP95N3LLH6 datasheet
 


Specifications of STP95N3LLH6

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs4.7 mOhm @ 40A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C80AVgs(th) (max) @ Id2.5V @ 250µA
Gate Charge (qg) @ Vgs20nC @ 4.5VInput Capacitance (ciss) @ Vds2200pF @ 25V
Power - Max70WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.006 Ohms
Drain-source Breakdown Voltage30 VContinuous Drain Current80 A
Power Dissipation70 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Fall Time23.4 nsRise Time91 ns
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-10307-5
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N-channel 30 V, 0.0037 Ω , 80 A, D
Features
Type
V
R
DSS
DS(on)
STB95N3LLH6
30 V
STD95N3LLH6
30 V
0.0042 Ω
STP95N3LLH6
30 V
STU95N3LLH6
30 V
R
* Q
industry benchmark
DS(on)
g
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest R
packages.
Table 1.
Device summary
Order codes
STB95N3LLH6
STD95N3LLH6
STP95N3LLH6
STU95N3LLH6
November 2009
STB95N3LLH6, STD95N3LLH6
STP95N3LLH6, STU95N3LLH6
STripFET™ VI DeepGATE™ Power MOSFET
max
I
D
0.0042 Ω
80 A
0.0042 Ω
80 A
80 A
0.0047 Ω
80 A
DS(on)
Figure 1.
in all
DS(on)
Marking
95N3LLH6
95N3LLH6
95N3LLH6
95N3LLH6
Doc ID 15228 Rev 3
2
PAK, DPAK, IPAK, TO-220
3
1
DPAK
IPAK
3
1
D²PAK
TO-220
Internal schematic diagram
D (TAB or 2)
G(1)
S(3)
Package
Packaging
D²PAK
Tape and reel
DPAK
Tape and reel
TO-220
Tube
IPAK
Tube
3
2
1
3
2
1
AM01474v1
1/18
www.st.com
18

STP95N3LLH6 Summary of contents

  • Page 1

    ... Power MOSFET exhibits the lowest R packages. Table 1. Device summary Order codes STB95N3LLH6 STD95N3LLH6 STP95N3LLH6 STU95N3LLH6 November 2009 STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 STripFET™ VI DeepGATE™ Power MOSFET max I D 0.0042 Ω 0.0042 Ω 0.0047 Ω DS(on) Figure 1 ...

  • Page 2

    Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    STx95N3LLH6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM ...

  • Page 4

    Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 4. Static Symbol Drain-source breakdown V (BR)DSS Voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

  • Page 5

    STx95N3LLH6 Table 6. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current ...

  • Page 6

    Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area I D (A) 100 10 Tj=175°C 1 Tc=25°C Sinlge pulse 0.1 0.1 1 Figure 4. Output characteristics I D (A) V =10V GS 300 250 200 150 100 50 ...

  • Page 7

    STx95N3LLH6 Figure 8. Gate charge vs gate-source voltage Figure (V) V =15V =80A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) ...

  • Page 8

    Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load D.U. Figure 14. Test circuit for inductive load switching and diode recovery times ...

  • Page 9

    STx95N3LLH6 Figure 18. Gate charge waveform Vds Vgs(th) Qgs1 Qgs2 Qgd Id Vgs Doc ID 15228 Rev 3 Test circuits 9/18 ...

  • Page 10

    Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

  • Page 11

    STx95N3LLH6 DIM (L1 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0.80 o ...

  • Page 12

    Package mechanical data DIM 12/18 TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 ...

  • Page 13

    STx95N3LLH6 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

  • Page 14

    Package mechanical data 14/18 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ...

  • Page 15

    STx95N3LLH6 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 1.9 R ...

  • Page 16

    Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 ...

  • Page 17

    STx95N3LLH6 6 Revision history Table 8. Document revision history Date 01-Dec-2008 20-May-2009 10-Nov-2009 Revision 1 First release – Document status promoted from preliminary data to datasheet. 2 – Added new package, mechanical data: D²PAK 3 Added new device in TO-220 ...

  • Page 18

    ... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...