STP95N3LLH6 STMicroelectronics, STP95N3LLH6 Datasheet - Page 7

• Manufacturer Part Number: STP95N3LLH6
• Description: MOSFET N-CH 30V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP95N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 80 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 23.4 ns
• Rise Time: 91 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10307-5

STx95N3LLH6
Figure 8.
Figure 10. Normalized gate threshold voltage
(norm)
V
GS(th)
V
(V)
0.8
0.2
1.2
1.0
0.6
0.4
12
10
GS
0
6
4
2
8
0
-55
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
-30
10
-5
V
DD
I
D
=80A
20 45
20
=15V
30
@250µA
70
95 120 145
40
50
Q
Doc ID 15228 Rev 3
g
(nC)
T
AM03378v1
AM03383v1
J
(°C)
Figure 11. Normalized on resistance vs
(norm)
R
1000
DS(on)
100
(pF)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
C
-55
Capacitance variations
temperature
-30
5
-5
V
I
10
20
D
GS
=40A
=10V
Electrical characteristics
45 70
15
95
20
120
20
145
V
DS
T
AM03384v1
AM03377v1
(V)
J
(°C)
Ciss
Coss
Crss
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