IRL1104LPBF International Rectifier, IRL1104LPBF Datasheet - Page 4

• Manufacturer Part Number: IRL1104LPBF
• Description: MOSFET N-CH 40V 104A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1104LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 104A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3445pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 104A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL1104LPBF

IRL1104S/LPbF
1000
4
100
0.1
6000
5000
4000
3000
2000
1000
10
1
0.2
Fig 7. Typical Source-Drain Diode
0
Fig 5. Typical Capacitance Vs.
T = 175 C
1
J
Drain-to-Source Voltage
V
V
SD
DS
°
Forward Voltage
0.8
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
J
=
=
=
=
0V,
C
C
C
gs
gd
ds
°
1.4
C iss
C oss
C rss
+ C
+ C
10
f = 1MHz
gd ,
gd
C
ds
2.0
V
SHORTED
GS
= 0 V
2.6
100
10000
1000
100
10
1
10
8
6
4
2
0
1
0
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
Fig 8. Maximum Safe Operating Area
C
J
I =
D
= 25 C
= 175 C
OPERATION IN THIS AREA LIMITED
V
62 A
Gate-to-Source Voltage
DS
°
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
20
BY R
10
40
DS(on)
V
V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 32V
= 20V
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60
10us
100us
1ms
10ms
13
100
80