STB150NF55T4 STMicroelectronics, STB150NF55T4 Datasheet - Page 16

• Manufacturer Part Number: STB150NF55T4
• Description: MOSFET N-CH 55V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB150NF55T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.006 Ohms
• Forward Transconductance Gfs (max / Min): 160 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 80 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 180 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7934-2; STB150NF55T4

Package mechanical data
16/19
DIM.
L20
L30
H1
øP
b1
e1
J1
L1
Q
A
D
E
F
b
c
e
L
15.25
MIN.
4.40
0.61
1.15
0.49
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
TO-220 MECHANICAL DATA
16.40
28.90
mm.
TYP
MAX.
15.75
10.40
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
STB150NF55 - STP150NF55 - STW150NF55
0.173
0.024
0.045
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
MIN.
0.60
0.645
1.137
TYP.
inch
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116