STB150NF55T4 STMicroelectronics, STB150NF55T4 Datasheet - Page 9

• Manufacturer Part Number: STB150NF55T4
• Description: MOSFET N-CH 55V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB150NF55T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.006 Ohms
• Forward Transconductance Gfs (max / Min): 160 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 80 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 180 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7934-2; STB150NF55T4

STB150NF55 - STP150NF55 - STW150NF55
Figure 17. Allowable lav vs time in avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
P
E
Where:
I
P
t
To derate above 25 °C, at fixed I
I
Where:
Z
equal to T
AV
AV
AV
th
D(AVE)
AS(AR)
D(AVE)
is the allowable current in avalanche
is the time in avalanche
= 2 * (T
= K * R
= 0.5 * (1.3 * B
is the average power dissipation in avalanche (single pulse)
= P
AV
th
jmax
D(AVE)
.
is the value coming from normalized thermal response at fixed pulse width
- T
CASE
* t
AV
VDSS
)/ (1.3 * B
* I
AV
AV
VDSS
)
, the following equation must be applied:
* Z
th
)
Electrical characteristics
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