IRFR9310TR Vishay, IRFR9310TR Datasheet - Page 4

• Manufacturer Part Number: IRFR9310TR
• Description: MOSFET P-CH 400V 1.8A DPAK
• Manufacturer: Vishay

Specifications of IRFR9310TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 Ohms
• Drain-source Breakdown Voltage: - 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.1
0.1
10
10
1
1
1
1
TOP
BOTTOM
TOP
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
-V
-V
DS
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
10
10
-4.5V
20μs PULSE WIDTH
T = 25 C
20μs PULSE WIDTH
T = 150 C
J
J
-4.5V
°
°
100
100
0.1
Fig. 4 - Normalized On-Resistance vs. Temperature
10
2.5
2.0
1.5
1.0
0.5
0.0
1
4
-60 -40 -20
Fig. 3 - Typical Transfer Characteristics
I =
D
T = 25 C
J
-V
-1.8A
5
GS
T , Junction Temperature ( C)
J
°
, Gate-to-Source Voltage (V)
0
6
20 40 60 80 100 120 140 160
T = 150 C
J
7
°
V
20μs PULSE WIDTH
S-82992-Rev. B, 12-Jan-09
Document Number: 91284
DS
8
= -50V
V
°
GS
9
=
-10V
10