IRFR9310TR Vishay, IRFR9310TR Datasheet - Page 5

• Manufacturer Part Number: IRFR9310TR
• Description: MOSFET P-CH 400V 1.8A DPAK
• Manufacturer: Vishay

Specifications of IRFR9310TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 Ohms
• Drain-source Breakdown Voltage: - 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91284
S-82992-Rev. B, 12-Jan-09
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
500
400
300
200
100
20
16
12
8
4
0
0
0
1
I =
D
-1.1A
-V
Q , Total Gate Charge (nC)
DS
G
4
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
C iss
C oss
C rss
0V,
C
C
C
gs
gd
ds
V
V
V
+ C
+ C
8
10
DS
DS
DS
f = 1MHz
gd ,
gd
FOR TEST CIRCUIT
=-320V
=-200V
=-80V
SEE FIGURE
C
ds
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
12
SHORTED
13
16
100
100
0.1
0.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
1
1
1.0
10
T
T
Single Pulse
Fig. 8 - Maximum Safe Operating Area
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
-V
DS
°
SD
°
T = 150 C
J
2.0
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
BY R
100
3.0
DS(on)
T = 25 C
J
Vishay Siliconix
°
4.0
V
www.vishay.com
GS
10us
100us
1ms
10ms
= 0 V
1000
5.0
5