IRFR9310TR Vishay, IRFR9310TR Datasheet - Page 6

• Manufacturer Part Number: IRFR9310TR
• Description: MOSFET P-CH 400V 1.8A DPAK
• Manufacturer: Vishay

Specifications of IRFR9310TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 Ohms
• Drain-source Breakdown Voltage: - 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
www.vishay.com
6
Fig. 9 - Maximum Drain Current vs. Case Temperature
2.0
1.6
1.2
0.8
0.4
0.0
25
0.01
0.1
10
0.00001
1
D = 0.50
50
T , Case Temperature ( C)
C
0.20
0.10
0.05
0.02
0.01
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
0.0001
100
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
1. Duty factor D = t / t
2. Peak T = P
GS
DS
Notes:
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
J
V
DS
DM
t
r
x Z
1
0.1
thJC
P
2
DM
D.U.T.
+ T
R
C
t
S-82992-Rev. B, 12-Jan-09
1
Document Number: 91284
D
t
d(off)
t
2
t
f
+
-
V
DD
1